Method for removing laminated material on surface of intermediately discharged silicon wafer

Abstract

Provided is a method for removing a laminated material on a surface of a silicon wafer capable of considerably efficiently removing a laminated material on a surface of a silicon wafer at a low cost with a simple apparatus without a negative effect on environment or a serious damage on the silicon wafer as a substrate. A blasting process was performed by spraying boron carbide (B4C) having a particle size of #220 as an abrasive on a laminate surface of a laminated material of an intermediately discharged silicon wafer using a blasting machine (dry type that sprays a dry abrasive, and a gravity type that sprays the abrasive fallen from a tank of the abrasive due to gravity on a compressed air) under spray conditions of a spray distance=120 mm and a spray pressure=0.2 MPa for five seconds.

Dependencies are inferred from the claim text.