Method of manufacturing semiconductor device and semiconductor device

A method of manufacturing a semiconductor device, including a conversion step of converting amorphous silicon into single-crystal silicon, wherein

• the conversion step includes:
• a first step of forming a silicide to contact the amorphous silicon by forming, by treatment with heating, a first film containing a first material to cover the amorphous silicon,
• a second step of forming a compound formed by Si, the first material, and a second material to contact the silicide by forming, by treatment with heating, a second film containing the second material to cover the silicide after the first step, and
• a third step of changing the silicide remaining after the second step to the compound by annealing,
• the first material is one material selected from a group consisting of Ni, Pd, Ti, Cu, Pt, Co, Mo, Mg, W, Cr, and Mn, and
• the second material is one material selected from a group consisting of Al, Au, Sb, In, Ag, and Ga.