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US 2025/0080056 A1Published application
Semiconductor device and power amplification module
AssigneeMurata Manufacturing Co., Ltd.
InventorsMasatoshi KAMITANI, Fumio HARIMA, Yoshiaki SUKEMORI, Yuuki NAKANO
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Abstract
A semiconductor device includes: a first semiconductor element in which a plurality of transistors arranged in one direction are electrically connected in parallel, and a second semiconductor element provided in both end portions in the arrangement direction of the transistors, wherein the lower an ambient temperature is, the greater a current flowing through the second semiconductor element relatively increases.
Claims6
A semiconductor device comprising:
- a first semiconductor element comprising a plurality of transistors physically arranged in a first direction and electrically connected in parallel with each other;
- and
- a second semiconductor element at one or both ends of the first semiconductor element in the first direction,
- wherein a level of a current flowing through the second semiconductor is related to an ambient temperature, such that as the ambient temperature decreases, the level of the current flowing through the second semiconductor element relatively increases.
1 more element
Dependencies are inferred from the claim text.