Methods of manufacturing resistor devices
AssigneeMicron Technology, Inc.
InventorsAhmed N. Noemaun, Durga P. Panda
Life of this patent
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Abstract
A method of manufacturing a resistor device includes forming a stepped trench in a substrate, and forming an etch stop material within the stepped trench. An electrically resistive material is disposed within the stepped trench, and an electrically insulating material is disposed on the electrically resistive material. The method further includes repeating the disposing the electrically resistive material and the disposing the electrically insulating material operations a predetermined number of times.
Claims20
A method of manufacturing a resistor device, the method comprising:
- forming a stepped trench in a substrate;
- forming an etch stop material within the stepped trench;
- disposing an electrically resistive material within the stepped trench;
- disposing an electrically insulating material on the electrically resistive material;
- and
- repeating the disposing the electrically resistive material and the disposing the electrically insulating material operations a predetermined number of times.
A method of manufacturing a resistor device, the method comprising:
- forming a stepped trench in a base substrate;
- forming a stack of electrically resistive materials in the stepped trench, the stack having a first end and a second end opposite the first end;
- forming electrical contacts at the first end of the stack, the second end of the stack, or the first end and the second end of the stack, each of the electrical contacts electrically connected to one or more of the electrically resistive materials of the stack;
- and
- forming a switch circuitry configured to electrically connect the electrically resistive materials between a first resistor terminal of the resistor device and a second resistor terminal of the resistor device, the switch circuitry electrically connected to the electrically resistive materials of the stack through electrical contacts.
A method of manufacturing a resistor device, the method comprising:
- forming a stepped trench in a substrate including a semiconductor material;
- forming an etch stop material adjacent to the stepped trench;
- forming a stack in the stepped trench and adjacent to the etch stop material, the stack comprising electrically resistive materials;
- forming a first electrical contact at a first end of the stack, the first electrical contact electrically connected to one or more of the electrically resistive materials at a first end of the stack;
- and
- forming one or more electrical contact at a second end opposite to the first end of the stack, the one or more electrical contact electrically connected to at least one of the electrically resistive materials at the second end of the stack.
Dependencies are inferred from the claim text.