Thin film transistor substrate and display device using the same
AssigneeLG Display Co., Ltd.
InventorsYounghyun KO, JuHeyuck BAECK, ChanYong JEONG
Life of this patent
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Abstract
A thin film transistor substrate includes a substrate; an active layer on the substrate and including an active hole; and a gate electrode on the active layer. The active layer includes a channel part including a first channel part having a first length and a second channel part continuous with the first channel part and having a second length. The active hole includes a first active hole at a boundary portion between the first channel part and the second channel part.
Claims20
A thin film transistor substrate, comprising:
- a substrate;
- an active layer on the substrate and including an active hole;
- and
- a gate electrode on the active layer,
- wherein the active layer includes a channel part including a first channel part having a first length and a second channel part continuous with the first channel part and having a second length, and
- wherein the active hole includes a first active hole at a boundary portion between the first channel part and the second channel part.
A thin film transistor substrate, comprising:
- a substrate;
- an active layer on the substrate;
- and
- a gate electrode on the active layer,
- wherein the active layer includes a first channel part overlapping the gate electrode and having a first length, and a second channel part continuous with the first channel part, overlapping the gate electrode, and having a second length, and
- wherein the active layer includes an active hole so that carrier does not move from the second channel part to the first channel part.
A display device including the thin film transistor substrate, comprising:
- a substrate;
- an active layer on the substrate and including an active hole;
- and
- a gate electrode on the active layer,
- wherein the active layer includes a channel part including a first channel part having a first length and a second channel part continuous with the first channel part and having a second length, and
- wherein the active hole includes a first active hole at a boundary portion between the first channel part and the second channel part.
Dependencies are inferred from the claim text.