Adjacent compensated codoping in semiconductor materials

A process for obtaining CdTe semiconductor films as host material codoped with Silver and Iodine by adjacent compensated codoping, through radio frequency sputtering comprising:

• a. conducting the formation of the sputtering target using a powdered mixture of the compounds CdTe and AgI by pressing it inside a stainless-steel die at room temperature until a compact target of 5.08 cm (2 inch) in diameter and 3.175 mm (⅛ inch) thick is formed;
• b. applying a temperature of 275° C. to the glass substrate during the growth of the films;
• c. using argon as working gas at a pressure of 1 mTorr, a radio frequency power of 35 W applied to the target during 30 minutes, with the target-substrate distance of 8.5 cm;
• and
• d. applying a rotation to the substrate holder of 50 rpm during growth.

A process for obtaining a CdS semiconductor film as a host material, codoped with Silver and Chlorine by adjacent compensated codoping, through radio frequency sputtering comprising:

• a. conducting the formation of the sputtering target using a powdered mixture of the compounds CdS and AgCl by pressing it inside a stainless-steel die at room temperature until a compact target of 5.08 cm (2″) in diameter and 3.175 mm (⅛″) thick is formed:
• b. applying a temperature of 250° C. to the glass substrate during the growth of the films;
• c. using argon as working gas at a pressure of 1 mTorr, a radio frequency power of 35 W applied to the target for 20 minutes, with the target-substrate distance of 8.5 cm;
• and
• d. applying a rotation to the substrate holder of 50 rpm during growth.

A process for obtaining Ge semiconductor material as a host material, codoped with Gallium and Arsenic by adjacent compensated codoping, through radio frequency sputtering comprising:

• a. conducting the formation of the sputtering target using a powdered mixture of Ge and GaAs by pressing it inside a stainless-steel die at room temperature until a compact target of 5.08 cm (2 inch) in diameter and 3.175 mm (⅛ inch) thick is formed:
• b. applying a temperature of 300° C. to the glass substrate during the growth of the films;
• c. using argon as working gas at a pressure of 1 mTorr, a radio frequency power of 35 W applied to the target for 30 minutes, with the target-substrate distance of 8.5 cm;
• and
• d. applying a rotation to the substrate holder of 50 rpm during growth,
• e. thermal annealing after growth for 30 minutes at 550° C.