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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorHung-Te Lin
Estimating the term…
Semiconductor structure and methods for fabricating the same are provided. An example semiconductor structure includes a bulk substrate having a top surface and a silicon-on-insulator (SOI) substrate merged in the bulk substrate. The SOI substrate further includes a heavily doped layer, an insulating layer disposed on and surrounded by the heavily doped layer, and an active substrate disposed on and surrounded by the insulating layer. The semiconductor structure further includes one or more semiconductor devices disposed in the active substrate, a peripheral heavily doped region connected to the heavily doped layer, and a discharging metal structure electrically interconnecting the semiconductor devices to the peripheral heavily doped region.
A semiconductor structure, comprising:
A semiconductor structure, comprising:
A method for fabricating a semiconductor structure, the method comprising:
Dependencies are inferred from the claim text.