Method for producing fet structure

Abstract

The present disclosure relates to a method for producing a field-effect transistor, FET, structure (10, 10′, 10″, 10′″). The method comprises the steps of: a) generating a first structure on a substrate (11), the first structure comprising a first layer stack (12a), a second layer stack (12b), and a wall (15) between the first layer stack (12a) and the second layer stack (12b), wherein the first layer stack (12a) and the second layer stack (12b) each comprise one or more first material layers (13) and two or more second material layers (14) stacked in alternating manner, and wherein the wall (15) is electrically non-conductive; b) removing the one or more first material layers (13) of the first layer stack (12a) to generate one or more cavities in the first layer stack (12a); c) etching into one side of the wall (15) through the one or more cavities in the first layer stack (12a) to recess the side of the wall (15), thereby generating a vertical cavity (19) between the first layer stack (12a) and the recessed side of the wall (15); and d) filling the cavities in the first layer stack (12a) and the vertical cavity (19) with gate dielectric materials and gate metals (17).

Dependencies are inferred from the claim text.