Method of manufacturing semiconductor device and associated memory device

A semiconductor device, comprising:

• a plurality of gate electrode layers and a plurality of insulating layers alternatingly disposed with the plurality of gate electrode layers over a substrate, the plurality of gate electrode layers and the plurality of insulating layers including a ring shape having a first sidewall and a second sidewall;
• a ferroelectric material layer disposed on the first sidewall;
• an oxide layer disposed on the ferroelectric material layer and the second sidewall;
• and
• a channel layer laterally surrounded by the plurality of gate electrode layers and the plurality of insulating layers, and adjacent to the oxide layer.

A method of forming a memory device, comprising:

• forming a plurality of memory cells connected together, each of the plurality of memory cells including a first transistor, a second transistor and a capacitor, wherein the first transistor and the second transistor share a gate terminal, a source terminal and a drain terminal;
• electrically connecting the capacitor to the gate terminal;
• and
• forming a selection transistor to connect to the plurality of memory cells.