Gate structure in semiconductor method and method of forming the same

A method comprising:

• forming a semiconductor region;
• forming a source/drain region in the semiconductor region;
• and
• forming a gate structure comprising:
• forming a gate dielectric layer over the semiconductor region;
• incorporating fluorine into the gate dielectric layer;
• incorporating a dipole dopant into the gate dielectric layer;
• and
• forming a gate electrode layer over the gate dielectric layer.

A method comprising:

• forming a gate structure on a top surface and sidewall of a semiconductor fin, wherein the forming the gate structure comprises:
• forming a gate dielectric layer on the semiconductor fin;
• soaking the gate dielectric layer in a fluorine-containing gas to form fluorine-containing bonds in the gate dielectric layer;
• incorporating a dipole dopant into the gate dielectric layer, so that the dipole dopant bond with the fluorine-containing bonds to form additional bonds;
• and
• forming a gate electrode on the gate dielectric layer;
• and
• forming a source/drain region, wherein the gate structure and the source/drain region are comprised in a transistor.