Semiconductor structure and method of fabricating the same
AssigneeIndustrial Technology Research Institute
InventorsPo-Chun Yeh, Hsiang-Chun Wang
Life of this patent
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Abstract
A semiconductor structure including a substrate, a conductive layer, and a semiconductor device is provided. The substrate includes a first surface, a second surface opposite to the first surface, at least one insulating vacancy extending from the first surface toward the second surface, and a through hole passing through the substrate. The conductive layer fills in the through hole. The semiconductor device is disposed on the second surface and is electrically connected to the conductive layer, and the at least one insulating vacancy is distributed corresponding to the semiconductor device.
Claims20
A semiconductor structure, comprising:
- a substrate, comprising a first surface, a second surface opposite to the first surface, at least one insulating vacancy extending from the first surface to the second surface, and a through hole passing through the substrate;
- an insulating material, filling in the insulating vacancy;
- a conductive layer, filling in the through hole;
- and
- a semiconductor device, disposed on the second surface, wherein the semiconductor device is electrically connected to the conductive layer, wherein the insulating vacancy is distributed corresponding to the semiconductor device.
A semiconductor structure, comprising:
- a substrate, comprising a first surface, a second surface opposite to the first surface, at least one insulating vacancy extending from the first surface to the second surface, and a through hole penetrating the substrate;
- a first conductive layer, filling in the insulating vacancy;
- a second conductive layer, filling in the through hole, wherein the first conductive layer and the second conductive layer are electrically insulated from each other;
- and
- a semiconductor device, disposed on the second surface, and the semiconductor device is electrically connected to the second conductive layer, wherein the insulating vacancy is distributed corresponding to the semiconductor device.
A semiconductor structure, comprising:
- a substrate, comprising a first surface, a second surface opposite to the first surface, at least one insulating vacancy extending from the first surface to the second surface, and a through hole penetrating the substrate;
- a conductive layer, filling in the through hole;
- and
- a semiconductor device, disposed on the second surface, and the semiconductor device being electrically connected to the conductive layer, wherein the insulating vacancy is distributed corresponding to the semiconductor device, wherein the semiconductor device comprises a semiconductor layer, and the semiconductor layer has a doped region distributed corresponding to the at least one insulating vacancy.
A method for manufacturing a semiconductor structure, comprising:
- providing a substrate, wherein the substrate comprises a first surface and a second surface opposite the first surface;
- forming a semiconductor device on the second surface of the substrate;
- forming at least one insulating vacancy and a through hole penetrating the substrate in the substrate, wherein the vacancy extends from the first surface to the second surface;
- forming an insulating material or a first conductive layer in the insulating vacancy, or forming a doped region in the semiconductor device through the insulating vacancy;
- and
- forming a second conductive layer in the through hole, wherein the semiconductor device is electrically connected to the second conductive layer, and the insulating vacancy is distributed corresponding to the semiconductor device.
Dependencies are inferred from the claim text.