Insulating-gate bipolar transistors including a reverse conducting diode
AssigneeGlobalFoundries U.S. Inc.
InventorsFrancois Hebert, James A. Cooper
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Abstract
Structures for an insulated-gate bipolar transistor and methods of forming a structure for an insulated-gate bipolar transistor. The structure comprises a semiconductor substrate having a front surface and a back surface opposite from the front surface. The semiconductor substrate comprises a wide bandgap semiconductor material. The structure further comprises a gate electrode at the front surface of the semiconductor substrate, and a diode at the back surface of the semiconductor substrate.
Claims20
A structure for a transistor, the structure comprising:
- a semiconductor substrate comprising a wide bandgap semiconductor material, the semiconductor substrate having a front surface and a back surface opposite from the front surface;
- a gate electrode at the front surface of the semiconductor substrate;
- and
- a first diode at the back surface of the semiconductor substrate.
A method of forming a structure for a transistor, the method comprising:
- forming a gate electrode at a front surface of a semiconductor substrate, wherein the semiconductor substrate comprises a wide bandgap semiconductor material, and the semiconductor substrate has a back surface opposite from the front surface;
- and
- forming a first diode at the back surface of the semiconductor substrate.
Dependencies are inferred from the claim text.