Semiconductor device and manufacturing method of the same

A method of manufacturing a semiconductor device, comprising:

• forming a stacked body in which sacrificial layers and insulating layers are alternately stacked in a first direction;
• forming a hole extending through the stacked body in the first direction;
• forming a first film of an insulator on an inner side face of the hole;
• forming a first charge storage film on the first film;
• forming a second film of an insulator on the first charge storage film;
• forming a semiconductor layer on the second film;
• removing the sacrificial layers so as to expose the first film;
• exposing the first charge storage film by removing the first film in an area where the sacrificial layers are removed;
• selectively forming a second charge storage film on the exposed first charge storage film;
• and
• forming a third film of an insulator on the second charge storage film,
• wherein the second charge storage film is an oxide film, a nitride film, or an oxynitride film, containing at least one of hafnium (Hf), aluminum (Al), and zirconium (Zr).

A method of manufacturing a semiconductor device, comprising:

• forming a stacked body in which sacrificial layers and insulating layers are alternately stacked in a first direction;
• forming a hole passing through the stacked body in the first direction;
• selectively forming a first film of an insulator on the insulating layers on an inner side face of the hole;
• forming a second film of an insulator on the sacrificial layers and the first film;
• forming a first charge storage film on the second film and removing the first charge storage film until the second film in an area corresponding to the first film is exposed;
• forming a second charge storage film on the second film and a remaining portion of the first charge storage film;
• forming a third film of an insulator on the fourth charge storage film;
• and
• forming a semiconductor layer on the third film,
• wherein the first charge storage film is an oxide film, a nitride film, or an oxynitride film, containing at least one of hafnium (Hf), aluminum (Al), and zirconium (Zr).