Managing vertical structures in three-dimensional semiconductive devices

A semiconductor device, comprising:

• a semiconductor substrate;
• a plurality of vertical transistors positioned in the semiconductor substrate along a horizontal direction, each of the plurality of vertical transistors extending along a vertical direction perpendicular to the horizontal direction;
• and
• a plurality of isolating regions in the semiconductor substrate, each of the plurality of isolating regions being between two adjacent vertical transistors of the plurality of vertical transistors along the horizontal direction,
• wherein the isolating region comprises a conductive material, and wherein, along the vertical direction, a length of the conductive material in the isolating region is greater than a length of a vertical gate of each of the two adjacent vertical transistors.

A system, comprising:

• a memory device comprising:
• a semiconductor substrate;
• a plurality of vertical transistors positioned in the semiconductor substrate along a horizontal direction, each of the plurality of vertical transistors extending along a vertical direction perpendicular to the horizontal direction;
• and
• a plurality of isolating regions in the semiconductor substrate, each of the plurality of isolating regions being between two adjacent vertical transistors along the horizontal direction, wherein the isolating region comprises a conductive material, and wherein, along the vertical direction, a length of the conductive material in the isolating region is greater than a length of a vertical gate of each of the two adjacent vertical transistors;
• and
• a controller coupled to the memory device and configured to control the memory device.