Method for manufacturing aluminum pad of semiconductor chip

Abstract

This application discloses a method for manufacturing an aluminum pad of a semiconductor chip, an upper surface of a semiconductor substrate is a top metal layer which has been grown, a passivation layer with a SiN-OX-SiN-OX four-layer structure from bottom to top is deposited on the top metal layer, the passivation layer in a via area is removed and the passivation layer outside the via area is reserved, an aluminum pad layer process is performed, remove aluminum in areas not requiring aluminum and reserve aluminum in the via area to complete the fabrication of the aluminum pad. This application can not only solve the side effect of aluminum pad crystal from the source on the premise of ensuring the functionality of the aluminum pad, but also save one mask and one photo layer, the cost is low, and the process is stable.

Dependencies are inferred from the claim text.