Semiconductor device

A semiconductor device, comprising:

• a substrate including a memory cell region and a peripheral circuit region;
• capacitors on the memory cell region of the substrate;
• peripheral transistors on the peripheral circuit region of the substrate;
• an interlayer insulating layer covering the capacitors and the peripheral transistors on the substrate;
• lower contacts in the interlayer insulating layer, the lower contacts electrically connected to the capacitors and the peripheral transistors;
• a lower insulating layer on the interlayer insulating layer;
• a lower wiring layer on the lower insulating layer and electrically connected to the lower contacts;
• a first upper insulating layer on the lower insulating layer;
• an upper contact penetrating through the first upper insulating layer and connected to the lower wiring layer;
• an upper wiring layer on the first upper insulating layer and connected to the upper contact;
• and
• a second upper insulating layer on the first upper insulating layer and covering the upper wiring layer, wherein
• the upper wiring layer includes an aluminum alloy,
• 0.01-3 wt % of the aluminum alloy is at least one dopant among Zn, Ni, V, and Cr, and
• a balance of the aluminum alloy includes Al.

A semiconductor device, comprising:

• a substrate including devices;
• an interlayer insulating layer covering the devices on the substrate;
• a lower contact on the interlayer insulating layer and connected to the devices;
• a lower insulating layer on the substrate;
• a lower wiring layer on the lower insulating layer and connected to the lower contact;
• a first upper insulating layer on the lower insulating layer;
• an upper contact penetrating through the first upper insulating layer and connected to the lower wiring layer;
• a second upper insulating layer on the first upper insulating layer;
• and
• an upper wiring layer on the second upper insulating layer and connected to the upper contact, wherein
• the upper wiring layer includes an aluminum alloy,
• 0.01-1.5 wt % of the aluminum alloy is a first dopant among at least one of Zn and Ni,
• 0.01-1.5 wt % of the aluminum alloy is a second dopant among at least one of V and Cr, and
• a balance of the aluminum alloy includes Al.