US 2025/0062226 A1 · THREE-DIMENSIONAL INTEGRATED CIRCUIT STACK

Abstract

A three-dimensional integrated circuit stack comprises a first integrated circuit structure, a second integrated circuit structure bonding to the first integrated circuit structure, and a redistribution structure. The first integrated circuit structure comprises a first semiconductor device, a first buffer structure, a first interconnect structure, a first conductive via, and a first through via. The first semiconductor device is located between the first buffer structure and the first interconnect structure. The first conductive via is extending through the first buffer structure and in contact with the first semiconductor device. The first through via is extending from the first buffer structure to the first interconnect structure. The redistribution structure is disposed on the first buffer structure, electrically connected to the first semiconductor device through the first conductive via, and electrically connected to the first interconnect structure through the first through via.

Claims20

Dependent claims

A three-dimensional integrated circuit stack, comprising:

a first integrated circuit structure, comprising:
a first semiconductor device;
a first buffer structure;
a first interconnect structure, wherein the first semiconductor device is located between the first buffer structure and the first interconnect structure;
a first conductive via, extending through the first buffer structure and in contact with the first semiconductor device;
and
a first through via, extending from the first buffer structure to the first interconnect structure;
and
a second integrated circuit structure, bonding to the first integrated circuit structure;
and
a redistribution structure, disposed on the first buffer structure, electrically connected to the first semiconductor device through the first conductive via, and electrically connected to the first interconnect structure through the first through via.

8 more elements

A three-dimensional integrated circuit stack, comprising:

a first die, comprising:
a first semiconductor device and a first insulation structure adjacent to the first semiconductor;
a first buffer structure and a first interconnect structure, wherein the first semiconductor device and the first insulation structure are located between the first buffer structure and the first interconnect structure;
a first conductive via, continuously passing through the first buffer structure and electrically connected with the first semiconductor device;
and
a first through via, continuously passing through the first buffer structure and the first insulation structure, and electrically connected with the first interconnect structure;
and
a second die, bonding to the first die;
and
a redistribution structure, disposed under the first buffer structure, and electrically connected to the first conductive via and the first through via.

7 more elements

A three-dimensional integrated circuit stack, comprising:

a first integrated circuit structure, comprising:
a first semiconductor device;
a first buffer structure, disposed under the first semiconductor device;
a first interconnect structure, disposed above the first semiconductor device;
a first conductive via, extending through the first buffer structure, and in contact with a source/drain region of the first semiconductor device at a bottom surface of the first semiconductor device;
and
a first through via, extending through the first buffer structure;
and
a second integrated circuit structure, attached to the first interconnect structure;
and
a redistribution structure, disposed under the first integrated circuit structure.

8 more elements

Dependencies are inferred from the claim text.

Three-dimensional integrated circuit stack

Life of this patent

Three-dimensional integrated circuit stack

Life of this patent

Abstract

Claims20