Method of manufacturing device die

A method comprising:

• forming a dielectric layer on a wafer including die regions and scribed lines between the die regions;
• removing portions of the dielectric layer over the scribe lines to form first trenches in the dielectric layer;
• performing a grooving process to form second trenches the second trenches in the wafer, wherein the second trenches and the third trenches are located under the first trenches, and the first trenches is wider than the second trenches and the third trenches;
• and
• performing a first singulation process along the scribe lines to singulate the wafer into device dies.

A method comprising:

• forming a dielectric layer on a passivation layer of a wafer;
• performing a first patterning process to form a first trench in the dielectric layer;
• performing a second patterning process to form a pair of second trench in the wafer, wherein the first trench is above the pair of second trenches, and a width of the first trench is larger than a lateral distance between the pair of second trenches;
• performing a singulation process to remove a portion of the wafer between the pair of second trenches to singulated the wafer into device dies;
• and
• forming an encapsulant laterally encapsulating the device dies, wherein the encapsulant comprises a first portion and a second portion, the second portion is between the first portion and the dielectric layer, and an upper surface of the passivation layer is in contact with the second portion.