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US 2025/0062209 A1Published application
Semiconductor device and semiconductor package structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWen-Sheng CHEN, Wei-Ling CHANG
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Abstract
A semiconductor device and a semiconductor package structure are provided. The semiconductor device includes a Radio Frequency (RF) circuit, at least one Ultra Thick Metal (UTM) layer and at least one aluminum (AP) mesh layer. The UTM layer is stacked on the RF circuit. The aluminum mesh layer is stacked on the UTM layer, and the UTM layer is connected to a power source or a ground through the aluminum mesh layer.
Claims20
A semiconductor device, comprising:
- a Radio Frequency (RF) circuit;
- at least one Ultra Thick Metal (UTM) layer, stacked on the RF circuit;
- and
- at least one aluminum (AP) mesh layer, wherein the aluminum mesh layer is stacked on the UTM layer, and the UTM layer is connected to a power source or a ground through the aluminum mesh layer.
1 more element
A semiconductor device, comprising:
- a Radio Frequency (RF) circuit;
- at least one Ultra Thick Metal (UTM) layer, stacked on the RF circuit;
- and
- at least one copper mesh redistribution layer (RDL), wherein the copper mesh RDL is stacked on the UTM layer, and the UTM layer is connected to a power source or a ground through the copper mesh RDL.
1 more element
A semiconductor package structure, comprising:
- a semiconductor device, comprising:
- a Radio Frequency (RF) circuit;
- and
- at least one Ultra Thick Metal (UTM) layer, stacked on the RF circuit;
- and
- an interposer, including at least one routing mesh layer, wherein the interposer is stacked on the semiconductor device, and the UTM layer is connected to a power source or a ground through the routing mesh layer.
3 more elements
Dependencies are inferred from the claim text.