Package structure, semiconductor die and method of manufacturing the same

A method of forming a semiconductor die, comprising:

• providing a semiconductor substrate with conductive pads disposed on the semiconductor substrate;
• forming a passivation layer over the semiconductor substrate and partially covering the conductive pads with portions of the conductive pads exposed from the passivation layer;
• forming connectors on the exposed portions of the conductive pads, comprising:
• forming a seed layer over the passivation layer and on the exposed portions of the conductive pads;
• forming a first patterned photoresist layer with first openings over the seed layer, exposing portions of the seed layer;
• forming a first conductive material into the first openings to form first conductive pillars on the exposed portions of the seed layer within the first openings;
• removing the first patterned photoresist layer;
• forming a second patterned photoresist layer with second openings over the seed layer and on the first conductive pillars, exposing portions of the first conductive pillars;
• forming a second conductive material into the second openings to form second conductive pillars on the exposed portions of the first conductive pillars;
• and
• removing the second patterned photoresist layer;
• and
• performing a testing process by applying test probes to the second conductive pillars of the connectors.

A method of forming a package structure, comprising:

• forming a semiconductor die, comprising:
• providing a substrate with conductive pads disposed on the substrate;
• forming a passivation layer over the substrate and partially covering the conductive pads with portions of the conductive pads exposed from the passivation layer;
• and
• forming connectors on the conductive pads, comprising:
• forming a seed layer on the conductive pads and over the substrate;
• forming first conductive pillars on the conductive pads;
• forming second conductive pillars on the first conductive pillars respectively, wherein a span of the second conductive pillar is smaller than a span of the first conductive pillar, and an orthogonal projection of the second conductive pillar falls within an orthogonal projection of the first conductive pillar;
• forming probe pads on the second conductive pillars respectively;
• performing a testing process by applying test probes to the second conductive pillars of the connectors;
• and
• forming a protection layer covering the connectors;
• forming an encapsulant over the semiconductor die to encapsulate the semiconductor die;
• performing a planarization process to remove a portion of the encapsulant, a portion of the protection layer, and the probe pads to expose the second conductive pillars of the connectors;
• forming a redistribution (RDL) structure on the semiconductor die and the encapsulant;
• and
• forming a conductive terminal, electrically connected to the semiconductor die through the RDL structure.