Methods of manufacturing semiconductor device and sputtering chambers

A method of manufacturing a semiconductor device, the method comprising:

• measuring a magnetic field formed by a magnetic assembly positioned over a vacuum chamber in which a target is placed, wherein the magnetic assembly includes a first supporting structure retaining a first group of magnetic columns, and a second supporting structure retaining a second group of magnetic columns, wherein in a plan view of the magnetic assembly above the vacuum chamber, the first supporting structure extends in a first spiral arrangement of the first group of magnetic columns, the second supporting structure forms a loop of the second group of magnetic columns, the loop defines a space extending in a second spiral arrangement, and the first spiral arrangement of the first supporting structure resides in the second spiral arrangement of the space;
• adjusting position of one or more magnetic columns selected from the first and second groups of magnetic columns based on the measured magnetic field;
• and
• performing a sputtering operation on a semiconductor substrate using the target.

A sputtering chamber, comprising:

• a vacuum chamber including a processing region;
• a sputtering target disposed over the processing region;
• and
• a magnetic assembly disposed over the sputtering target, wherein the magnetic assembly includes a first supporting structure retaining a first group of magnetic columns, and a second supporting structure retaining a second group of magnetic columns, wherein in a plan view of the magnetic assembly above the vacuum chamber, the first supporting structure extends in a first spiral arrangement of the first group of magnetic columns, the second supporting structure forms a loop of the second group of magnetic columns, the loop defines a space extending in a second spiral arrangement, and the first spiral arrangement of the first supporting structure resides in the second spiral arrangement of the space.