Metal implantation to barrier or liner for interconnect

A method of forming a metal interconnect in a semiconductor structure, comprising:

• performing a barrier-liner layer deposition process to deposit a barrier-liner layer within an opening formed through a dielectric layer;
• performing a metal treatment process to implant metal dopants into a surface of the barrier-liner layer;
• and
• performing a gap fill process to form a metal interconnect on the metal treated surface of the barrier-liner layer within the opening.

A method of forming a metal interconnect in a semiconductor structure, comprising:

• performing a barrier layer deposition process to deposit a barrier layer within an opening formed through a dielectric layer;
• performing a first metal treatment process to implant first metal dopants into a surface of the barrier layer;
• performing a liner deposition process to deposit a liner layer on the barrier layer;
• performing a second metal treatment process to implant second metal dopants into a surface of the liner layer;
• and
• performing a gap fill process to form a metal interconnect on the metal treated surface of the liner layer within the opening.