Self aligned pattern formation post spacer etchback in tight pitch configurations

A method of forming a hard mask, comprising:

• forming a planar topography comprising at least two first regions, at least two second regions, and at least two third regions, wherein:
• each of the first, second and third regions are elongated and disposed in parallel with one another;
• and
• each of the first regions abuts and is disposed between a second region and a third region;
• forming a first opening in a first mask layer disposed above the planar topography, wherein the first opening exposes a first portion of a central first region and a first portion of a second first region laterally adjacent to the central first region;
• and
• forming a second opening, comprising forming a spacer on a sidewall of the first opening, wherein:
• the spacer covers the first portion of the second first region laterally adjacent to the central first region, and
• the first regions consist of a different material than the second and third regions.