Memory device and read operation during suspension of program operation thereof
AssigneeYangtze Memory Technologies Co., Ltd.
InventorsLei Shi, Zhuqin Duan, Jialiang Deng
Life of this patent
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AssigneeYangtze Memory Technologies Co., Ltd.
InventorsLei Shi, Zhuqin Duan, Jialiang Deng
Estimating the term…
A memory device includes an array of memory cells and a peripheral circuit coupled to the array of memory cells. The array of memory cells includes a first memory cell and a second memory cell. Each of the first and second memory cells is configured to store N-bits data. The peripheral circuit includes a page buffer circuit and control logic. The page buffer circuit includes at least a page buffer circuit coupled to the first and second memory cells, respectively. The page buffer circuit includes a sense out (SO) node and a cache storage unit. The control logic is configured to suspend a program operation on the first memory cell responsive to receiving a suspension command indicative of executing a read operation on the second memory cell, control the page buffer circuit to store suspended program information associated with a suspension of the program operation, and perform the read operation on the second memory cell, including directly storing one of N-bits data of the second memory cell into the cache storage unit through the SO node.
A memory device, comprising:
A memory system, comprising:
A method for operating a memory device comprising an array of memory cells, the array of memory cells comprising a first memory cell and a second memory cell that are coupled to a page buffer circuit in a page buffer, each of the first memory cell and the second memory cell configured to store N-bits data, the page buffer circuit comprising a sense out (SO) node and a cache storage unit, the method comprising:
Dependencies are inferred from the claim text.