Nonvolatile memory device and operation method thereof

A storage device comprising:

• a memory controller comprising a first temperature sensor;
• and
• a nonvolatile memory device comprising a plurality of memory cells connected to a plurality of word lines,
• wherein the memory controller is configured to transmit an address to the nonvolatile memory device, and
• wherein the nonvolatile memory device further comprises:
• an address decoder configured to select a word line among the plurality of word lines, based on the address received from the memory controller;
• a second temperature sensor configured to measure a read temperature of first memory cells connected to the selected word line from among the plurality of memory cells;
• and
• a temperature compensation circuit configured to calculate a read level offset based on the read temperature and a program temperature of the first memory cells measured by the first temperature sensor, and to generate a compensation read voltage based on the read level offset,
• wherein the address decoder is further configured to provide the compensation read voltage to the selected word line.

An operation method of a storage device which comprises a memory controller comprising a first temperature sensor and a nonvolatile memory device comprising a second temperature sensor, the method comprising:

• transmitting, by the memory controller, a read command for a first page and a program temperature of the first page measured by the first temperature sensor;
• measuring, by the nonvolatile memory device, a read temperature of the first page by using the second temperature sensor in response to the read command;
• calculating, by the nonvolatile memory device, a read level offset based on the program temperature and the read temperature;
• generating, by the nonvolatile memory device, a compensation read voltage based on the read level offset;
• and
• performing, by the nonvolatile memory device, a read operation on the first page based on the compensation read voltage.