Organotin photoresist composition for photolithography patterning

A method for photolithography patterning, comprising:

• depositing an organotin photoresist composition over a substrate;
• wherein the organotin photoresist comprises a (cyclopentadienyl)tin compound,
• wherein the (cyclopentadienyl)tin compound is one or more selected from chemical formulas (1)-(23) as below:
• wherein R1, R2, R3 are independently —R′, -ER′, —N(R′)2, —O—(C═O)—R′, —(C═O)—R′, —N(R′)—(C═O)—R′, or —(C═O)—N(R′)2 group, wherein R′ is H, a substituted or unsubstituted alkyl, alkenyl, alkynyl, cycloalkyl, or cycloalkenyl group with 1 to 20 carbon atoms, or a substituted or unsubstituted aryl group with 6-20 carbon atoms;
• wherein Ra, Rb, Rc, Rd are each independently H, a substituted or unsubstituted alkyl, alkenyl, alkynyl, cycloalkyl, or cycloalkenyl group with 1 to 20 carbon atoms, or a substituted or unsubstituted aryl group with 6-20 carbon atoms;
• E=O, S, Se, or Te, X=F, Cl, Br, or I;
• exposing the organotin photoresist layer to actinic radiation to form a latent pattern;
• and
• developing the latent pattern by applying a developer to remove the unexposed or exposed portion of photoresists to form a photolithography pattern.