Methods for depositing germanium films by atomic layer deposition

A method, comprising:

• exposing a base material to a first precursor to form a germanium compound on the base material, wherein the first precursor comprises germanium bis(trimethylsilyl)amide or a germanium bis(amide) having the chemical formula (R1R2R3Z1)(R4R5R6Z2)N—Ge—N(Z3R7R8R9)(Z4R10R11R12), wherein Z1, Z2, Z3, and Z4 are independently selected from germanium, tin, or silicon, and wherein R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, R11, and R12 are independently selected from hydrogen, deuterium, an alkyl group, an aryl group, a —SiRaRbRc moiety, a —GeRaRbRc moiety, a —SnRaRbRc moiety, a —SiRaRbCRcRdRe moiety, a —CRaRbSiRcRdRe moiety, a —SiRaRbGeRcRdRe moiety, or a moiety comprising carbon atoms, silicon atoms, germanium atoms, or tin atoms, or any combination thereof, wherein each atom of the carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof is fully saturated by having 4 bonds with respective substituents Ra through Rx or at least one other of the carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof, wherein up to 6 atoms of the carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof are distinct from any carbon atoms, silicon atoms, germanium atoms, or tin atoms of Ra through Rx, wherein Ra through Rx are independently selected from hydrogen, deuterium, an alkyl group, or an aryl group, and wherein x of Rx is an index distinct from a of Ra;
• reacting a second precursor with the germanium compound;
• and
• forming a layer of germanium on the base material based at least in part on exposing the base material to the first precursor and reacting the second precursor with the germanium compound.

A method, comprising:

• forming a plurality of stacks of materials on a substrate;
• exposing the plurality of stacks of materials to a first precursor to form a germanium compound on the plurality of stacks of materials, wherein the germanium compound comprises a germanium and at least one leaving group;
• exposing the plurality of stacks of materials to a second precursor at a temperature below 300 degrees Celsius;
• and
• forming a layer of germanium on the plurality of stacks of materials based at least in part on exposing the plurality of stacks of materials to the first precursor and reacting the second precursor with the germanium compound at the temperature below 300 degrees Celsius.