Semiconductor processing system, a semiconductor precursor storage vessel and a method of forming a silicon comprising layer
AssigneeASM IP Holding B.V.
InventorDieter Pierreux
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Abstract
A semiconductor processing system and method for depositing silicon layers on a plurality of substrates and a semiconductor precursor storage vessel is disclosed. The system may have a reaction chamber constructed and arranged to receive a boat with a plurality of substrates, a heater configured to heat the reaction chamber to a process temperature, and a silicon precursor source constructed and arranged to provide to the reaction chamber a halosilane.
Claims20
A semiconductor processing system configured to form a silicon comprising layer on a plurality of substrates, the system comprising:
- a reaction chamber constructed and arranged to receive a boat with a plurality of substrates,
- a heater configured to heat the reaction chamber to a process temperature,
- a silicon precursor source constructed and arranged to provide to the reaction chamber a halosilane having a formula SiH3-nXn—(SiH2-qXq)p SiH3-mXm, wherein n and m are independently selected from an integer having a value of at least 0 to at most 3, p is an integer from at least 0 to at most 2, q is an integer from at least 0 to at most 2, X is a halogen and n+m+q has a value of at least 1 to at most 5+q*p.
A semiconductor precursor storage vessel constructed and arranged for providing a precursor to a vertical furnace and comprising a halosilane having a formula SiH3-nXn—(SiH2-qXq)p SiH3-mXm, wherein n and m are independently selected from an integer having a value of at least 0 to at most 3, p is an integer having a value from at least 0 to at most 2, q is an integer having a value from at least 0 to at most 2, X is a halogen and n+m+q has a value of at least 1 to at most 5+q*p.
A method of forming a silicon comprising layer on a plurality of substrates, the method comprising:
- providing a boat with the plurality of substrates to a reaction chamber,
- providing a silicon precursor comprising a halosilane to the reaction chamber to form the silicon comprising layer on the plurality of substrates, wherein the halosilane has a formula SiH3-nXn—(SiH2-qXq)p SiH3-mXm, wherein n and m are independently selected from an integer having a value of at least 0 to at most 3, p is an integer having a value from at least 0 to at most 2, q is an integer having a value from at least 0 to at most 2, X is a halogen and n+m+q has a value of at least 1 to at most 5+q*p.
Dependencies are inferred from the claim text.