Resin composition, cured substance, laminate, manufacturing method for cured substance, manufacturing method for laminate, manufacturing method for semiconductor device, and semiconductor device

A resin composition comprising:

• a polyimide precursor containing a repeating unit represented by Formula (1);
• and
• a metal complex having a π-conjugated moiety containing a nitrogen atom,
• in Formula (1), Z1 is a tetravalent organic group that includes two or more ether groups and an aromatic ring structure, Y1 is a divalent organic group, A1 and A2 each independently represent an oxygen atom or —NRZ—, RZ is a hydrogen atom or a monovalent organic group, R1 and R2 each independently represent a hydrogen atom or a monovalent organic group, and at least one of R1 or R2 is a monovalent organic group having an ethylenically unsaturated bond.

A cured substance that satisfies all of the following condition (i) to condition (iv);

• condition (i):
• a Young's modulus of the cured substance is 3.5 GPa or more,
• condition (ii):
• a coefficient of thermal expansion of the cured substance in a temperature range of 25° C. to 125° C. is less than 50 ppm/° C.,
• condition (iii):
• a glass transition temperature of the cured substance is 240° C. or higher, and
• condition (iv):
• a breaking elongation of the cured substance is 40% or more.

A semiconductor device comprising:

• a semiconductor chip;
• and
• a re-distribution layer,
• wherein the re-distribution layer includes a wiring line and an interlayer insulating film for a re-distribution layer, the interlayer insulating film satisfying all of the following condition (i) to condition (iv),
• condition (i):
• a Young's modulus of the interlayer insulating film for a re-distribution layer is 3.5 GPa or more,
• condition (ii):
• a coefficient of thermal expansion of the interlayer insulating film for a re-distribution layer in a temperature range of 25° C. to 125° C. is less than 50 ppm/° C.,
• condition (iii):
• a glass transition temperature of the interlayer insulating film for a re-distribution layer is 240° C. or higher, and
• condition (iv):
• a breaking elongation of the interlayer insulating film for a re-distribution layer is 40% or more.