Cross-temperature compensation based on media endurance in memory devices

A system comprising:

• a memory device;
• and
• a processing device, operatively coupled to the memory device, the processing device to perform operations comprising:
• receiving, by a processing device, a read request with respect to a set of memory cells of the memory device;
• identifying, using a voltage adjustment data structure, a voltage adjustment value based on operational characteristics of the memory device;
• identifying a base bitline voltage associated with the set of memory cells;
• and
• performing, using the base bitline voltage and an adjusted bitline voltage based on the voltage adjustment value, a read operation with respect to the set of memory cells.

A non-transitory computer readable storage medium including instructions that, when executed by a processing device, cause the processing device to perform a method comprising:

• receiving, by a processing device, a read request with respect to a set of memory cells of a memory device;
• identifying, using a voltage adjustment data structure, a voltage adjustment value based on operational characteristics of the memory device;
• identifying a base bitline voltage associated with the set of memory cells;
• and
• performing, using the base bitline voltage and an adjusted bitline voltage based on the voltage adjustment value, a read operation with respect to the set of memory cells.