US 2025/0053184 A1Published application

Voltage reference circuit

AssigneeWise-Integration

InventorsDominique Bergogne, Sebastian Gaviria Duque, Plinio Bau

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Abstract

The invention relates to a voltage reference circuit comprising: a trailing transistor, the source and the gate of which are connected to the terminals of the dipole, a connecting quadrupole, the first terminal of which is connected to the gate of a leading transistor, the second terminal is connected to the source of the leading transistor, the third terminal to the source of the trailing transistor and the fourth terminal to the drain of the trailing transistor, the reference voltage being supplied to the source of the leading transistor, and a base transistor, the source of which is connected to the ground and the gate of which is connected to its drain, said drain being connected to a terminal of a second dipole, the other terminal of which is connected to the first dipole.

Claims10

Dependent claims

Voltage reference circuit comprising:

a leading depletion-mode transistor, a drain of which is connected to a voltage source,
a trailing depletion-mode transistor, a source of which is connected to a terminal of a first dipole, and a gate of which is connected to a second terminal of the first dipole,
a connecting quadrupole, the first terminal of which is connected to the gate of the leading transistor, the second terminal of which is connected to the source of the leading transistor, a third terminal of which is connected to the source of the trailing transistor and a fourth terminal of which is connected to the drain of the trailing transistor, the reference voltage being supplied to the source of the leading transistor, and
a base enhancement-mode transistor, the source of which is connected to a ground, and the gate of which is connected to its drain, said drain being connected to a second terminal of a second dipole, the first terminal of which is connected to the second terminal of the first dipole.

1 more element

Dependencies are inferred from the claim text.

Facts

Application: 18/717,749Filed 20 Dec 2022
Priority: FR 211432223 Dec 2021
Published: 13 Feb 2025
Term ends: Not estimatedThe source records don’t support an estimate.

Classification3 codes

G05F 3/242
Wherein the transistors are of the field-effect type only: with compensation for device parameters, e.g. channel width modulation, threshold…
G05F 3/30
Using diode- transistor combinations: regulators using the difference between the base-emitter voltages of two bipolar transistors operating at…
G05F
Systems for regulating electric or magnetic variables

Family

No related US applications are recorded in the indexed filing history.

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