Methods and systems for reducing particulate deposition on photomask
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJui-Chieh Chen, Yi-Wei Lee
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Abstract
Particulate deposition rate on a photolithographic mask, particularly of tin (Sn) particles produced within an EUV light source, is reduced by producing turbulence within a radiation source chamber of the EUV light source. Turbulence can be produced by changing the temperature, pressure, and/or gas flow rate within the radiation source chamber. The turbulence reduces the number of particles exiting the EUV light source which could be deposited on the photomask.
Claims20
An extreme ultraviolet (EUV) light source, comprising:
- a radiation source chamber;
- and
- a controller configured to change at least one of the temperature, pressure, or gas flow rate in the radiation source chamber between a first setpoint and a second setpoint;
- wherein a first temperature setpoint and a second temperature setpoint differ by at least 50° C.;
- or
- wherein a first pressure setpoint and a second pressure setpoint differ by at least 10 pascals;
- or
- wherein a first gas flow rate setpoint and a second gas flow rate setpoint differ by at least 0.5 slm.
An extreme ultraviolet (EUV) lithography system, comprising:
- an EUV light source comprising a radiation source chamber;
- and
- a controller configured to change at least one of the temperature, pressure, or gas flow rate in the radiation source chamber between a first setpoint and a second setpoint;
- wherein a first temperature setpoint and a second temperature setpoint differ by at least 50° C.;
- or
- wherein a first pressure setpoint and a second pressure setpoint differ by at least 10 pascals;
- or
- wherein a first gas flow rate setpoint and a second gas flow rate setpoint differ by at least 0.5 slm.
An extreme ultraviolet (EUV) lithography system, comprising:
- an EUV light source comprising a radiation source chamber;
- a projection optics module;
- a processing chamber for a photomask;
- and
- a controller configured to irregularly change at least one of the temperature, pressure, or gas flow rate in the radiation source chamber between a first setpoint and a second setpoint;
- wherein a first temperature setpoint and a second temperature setpoint differ by at least 50° C.;
- or
- wherein a first pressure setpoint and a second pressure setpoint differ by at least 10 pascals;
- or
- wherein a first gas flow rate setpoint and a second gas flow rate setpoint differ by at least 0.5 slm.
Dependencies are inferred from the claim text.