Semiconductor structure for inhibiting electrical cross-talk
AssigneeSmart Photonics Holding B.V.
InventorsPaul TIEBOT, Alonso Jesús MILLÁN-MEJÍA, Ludovicus Marie AUGUSTIN, Netsanet TESSEMA
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Abstract
A semiconductor structure for a photonic integrated circuit. The semiconductor structure comprises a waveguide and an active component of the photonic integrated circuit. An electrically resistive material is between the waveguide and the active component along a light propagation axis between the waveguide and the active component. The electrically resistive material has an electrical resistivity higher than the waveguide.
Claims20
A semiconductor structure for a photonic integrated circuit, comprising:
- a waveguide;
- an active component of the photonic integrated circuit;
- and
- an electrically resistive material between the waveguide and the active component along a light propagation axis between the waveguide and the active component, wherein the electrically resistive material has an electrical resistivity higher than the waveguide.
A method of manufacturing a semiconductor structure for a photonic integrated circuit, the method comprising:
- at least partly forming a waveguide and an active component on a substrate, wherein a contact side of the waveguide is in contact with the active component;
- removing a portion of at least one of the waveguide or the active component;
- and
- depositing an electrically resistive material in a space formed by the removing the portion of at least one of the waveguide or the active component, wherein the electrically resistive material has a resistivity higher than the waveguide.
Dependencies are inferred from the claim text.