Method for reducing stacking faults in silicon carbide, and structure created by means of said method

A silicon carbide substrate comprising:

• a first epitaxial layer in which stacking faults are converted into crystal defects other than the stacking faults;
• and
• a second epitaxial layer grown on the first epitaxial layer, wherein
• a density of stacking faults of the second epitaxial layer is 5.0 faults/cm2 or less.

A silicon carbide semiconductor device comprising:

• one epitaxial layer in which stacking faults are converted into crystal defects other than the stacking faults;
• and
• a device region formed in the epitaxial layer, wherein
• a density of the stacking faults in the epitaxial layer is 5.0 faults/cm2 or less.

A silicon carbide semiconductor device comprising:

• a first epitaxial layer in which stacking faults are converted into crystal defects other than the stacking faults;
• a second epitaxial layer grown on the first epitaxial layer;
• and
• a device region formed in the second epitaxial layer, wherein
• a density of stacking faults in the second epitaxial layer is 5.0 faults/cm2 or less.