Integrated epitaxy and preclean system

A processing system, comprising:

• a transfer chamber coupled to at least one film formation chamber;
• a oxide removal chamber coupled to the transfer chamber, the oxide removal chamber comprising a lid assembly having a plurality of stacked plates including a volume formed centrally in a first plate of the plurality of stacked plates that is bounded by a second plate of the plurality of stacked plates, the volume being in fluid communication with a mixing chamber via a plurality of central conduits, the mixing chamber formed centrally in a third plate of the plurality of stacked plates and being bounded by a gas distribution plate, wherein the mixing chamber includes a sidewall that tapers inwardly from the central conduits to the gas distribution plate;
• a plurality of inlets formed in the second plate of the plurality of stacked plates in an orthogonal relation to the plurality of central conduits;
• a showerhead positioned below the lid assembly in a spaced apart relation from the lid assembly;
• a substrate support comprising a cooling channel and a heater;
• and
• a load lock chamber coupled to the transfer chamber.

A method of processing a substrate, comprising:

• disposing the substrate in a processing chamber;
• flowing a reaction mixture through a conduit in fluid communication with the cone shaped chamber into a mixing chamber, wherein the reaction mixture comprises NH3 and HF, the mixing chamber having a sidewall that tapers inwardly from the conduit to the processing chamber;
• flowing the reaction mixture into the processing chamber;
• removing oxide from a substrate by a process that includes exposing the substrate to the reaction mixture;
• and
• forming a film on the substrate by a vapor phase epitaxy process.