Light emitting diode and light emitting device

A light emitting diode, comprising:

• a semiconductor stack layer having a lower surface and an upper surface opposite to each other, wherein the semiconductor stack layer comprises a first semiconductor layer, a light emitting layer, and a second semiconductor layer sequentially from the lower surface to the upper surface;
• an insulative barrier layer disposed on the lower surface of the semiconductor stack layer, wherein the insulative barrier layer has a first opening, and the first opening corresponds to a lower side of the first semiconductor layer;
• and
• a metal protective layer disposed on the lower surface of the semiconductor stack layer and connected to the insulative barrier layer, wherein a portion of the metal protective layer is filled in the first opening,
• wherein vertical projection points of edge endpoints of an upper surface of the insulative barrier layer on a horizontal plane are distributed within a vertical projection first connecting line section of edge endpoints of an upper surface of the metal protective layer on the horizontal plane.