Semiconductor device and method of forming the same

A method of forming a semiconductor device, comprising:

• forming a first metal-oxide-semiconductor (MOS) transistor on a substrate, wherein the first MOS transistor comprises a first gate dielectric layer on the substrate and a first gate electrode on the first gate dielectric layer;
• and
• forming a second MOS transistor on the substrate and electrically connecting the second MOS transistor and the first MOS transistor, wherein the second MOS transistor comprises a second gate dielectric layer on the substrate and a second gate electrode on the second gate dielectric layer, wherein the second gate electrode comprises:
• a first portion of a first conductivity type, wherein a width of the first portion is less than half of a total width of the second gate electrode;
• and
• second portions of a second conductivity type on opposite sides of the first portion.