Chemical-resistant protective film-forming composition having catechol group
AssigneeNissan Chemical Corporation
InventorsShun KUBODERA, Tokio NISHITA, Gun SON, Takahiro KISHIOKA
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AssigneeNissan Chemical Corporation
InventorsShun KUBODERA, Tokio NISHITA, Gun SON, Takahiro KISHIOKA
Estimating the term…
A composition for forming a protective film capable of forming a protective film excellent in resistance to a semiconductor wet etchant such as a basic hydrogen peroxide solution or an acidic hydrogen peroxide solution, which exhibits excellent resistance also to a resist solvent and can be effectively used also as a resist underlayer film-forming composition. A protective film-forming composition against a semiconductor wet etchant, including: (A) a compound represented by the following formula (A); and (B) a solvent. (In the formula (A), n represents an integer of 1 to 10, and when n is 2, X represents a sulfinyl group, a sulfonyl group, an ether group or a C2-50 divalent organic group, and when n is an integer other than 2, X represents a C2-50 n-valent organic group, Y represents —CH2CH(OH)CH2OC(═O)CH2(CH2)t—, —CH2CH(OH)CH2OC(═O)C(CN)(═CH)—, and t represents an integer of 1 to 6.)
A protective film-forming composition against a semiconductor wet etchant, comprising:
A resist underlayer film-forming composition, comprising:
Dependencies are inferred from the claim text.