Light-absorbing structure and photodetector having the same

Abstract

A light-absorbing structure includes a metal layer composed an inverted truncated-pyramid structure (ITPS) array to absorb an incident light especially in the infrared band. A cross-section of each inverted truncated-pyramid structure includes an upper base and a lower base, where the length of the upper base is greater than the length of the lower base. A photo detector includes a semiconductor layer, the mentioned metal layer, a first electrode, and a second electrode. An upper surface of the semiconductor layer includes an ITPS array and forms a Schottky contact with the metal layer. The first electrode contacts with an upper surface of the metal layer, and the second electrode forms Ohmic contact with a lower surface of the semiconductor layer.

Dependencies are inferred from the claim text.