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AssigneeKorea Electrotechnology Research Institute
InventorsHyoung Woo KIM, Jeong Hyun MOON, Wook BAHNG, Jae Hwa SEO
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A SiC semiconductor device having high pressure resistance properties is disclosed. The present invention provides a SiC semiconductor device comprising: a SiC substrate having a first surface and a second surface; an insulating area formed on the second surface side inside the SiC substrate; and a plurality of semiconductor areas including a source area, a base area, and a drain area formed along the first surface on the insulating area, wherein the SiC semiconductor device has a P/N junction parallel to the first surface, the P/N junction extending from the base area toward the drain area on the insulating area and being formed by a first auxiliary region of a first conductive type which is the same conductive type as the source area and a second auxiliary region of a second conductive type which is opposed to the first conductive type.
A SiC semiconductor device comprising a plurality of semiconductor regions comprising an insulation region formed at a second surface side in a SiC substrate having a first surface and a second surface, a source region formed on the insulation region along the first surface, a base region, and a drain region,
A method for manufacturing a SiC semiconductor device, the method comprising:
Dependencies are inferred from the claim text.