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US 2025/0031392 A1Published application
Shunt resistance, method of manufacturing shunt resistance, and semiconductor device
AssigneeRohm Co., Ltd.
InventorKosaku Tanaka
Life of this patent
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Abstract
Provided is a shunt resistance including a resistive element layer, a first electrode layer laminated on a first side in a thickness direction of the resistive element layer, and a second electrode layer laminated on a second side in the thickness direction of the resistive element layer.
Claims14
A shunt resistance comprising:
- a resistive element layer;
- a first electrode layer laminated on a first side in a thickness direction of the resistive element layer;
- and
- a second electrode layer laminated on a second side in the thickness direction of the resistive element layer.
1 more element
A method of manufacturing a shunt resistance, the method comprising:
- preparing a resistive element layer;
- forming a laminated metallic material, by forming a first electrode layer by plating on a first side in a thickness direction of the resistive element layer and forming a second electrode layer by plating on a second side in the thickness direction of the resistive element layer;
- and
- dividing the laminated metallic material into individual pieces.
1 more element
A method of manufacturing a shunt resistance, the method comprising:
- forming a laminated metallic material by compression-bonding a resistive element layer, a first electrode layer located on a first side in a thickness direction of the resistive element layer, and a second electrode layer located on a second side in the thickness direction of the resistive element layer;
- and
- dividing the laminated metallic material into individual pieces.
Dependencies are inferred from the claim text.