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US 2025/0031391 A1Published application
Semiconductor device with programmable insulating layer and method for fabricating the same
AssigneeNanya Technology Corporation
InventorYING-CHENG CHUANG
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Abstract
The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a valley inwardly positioned on a top surface of the substrate; a programmable insulating layer conformally positioned on the valley and including a V-shaped cross-sectional profile; and a top electrode positioned on the programmable insulating layer. The programmable insulating layer is configured to be blown out under a programming voltage.
Claims20
A semiconductor device, comprising:
- a substrate comprising an array region and a peripheral region positioned adjacent to the array region;
- a valley inwardly positioned on a top surface of the peripheral region of the substrate;
- a programmable insulating layer conformally positioned on the valley and comprising a V-shaped cross-sectional profile;
- a top electrode positioned on the programmable insulating layer;
- a peripheral gate structure positioned on the top surface of the peripheral region of the substrate;
- wherein the programmable insulating layer is configured to be blown out under a programming voltage.
3 more elements
A method for fabricating a semiconductor device, comprising:
- providing a substrate;
- forming an under layer on the substrate;
- forming a mask layer on the under layer;
- forming a first protection layer on the under layer and covering the mask layer;
- removing a portion of the first protection layer to expose the mask layer;
- removing the mask layer to expose a portion of the under layer;
- removing a portion of the under layer using the first protection layer as a mask to form an opening exposing a portion of the substrate;
- performing a valley etching process to remove a portion of the substrate and form a valley on a top surface of the substrate;
- conformally forming programmable insulating layer on the valley;
- and
- forming a top electrode on the programmable insulating layer;
- wherein the programmable insulating layer comprises a V-shaped cross-sectional profile and is configured to be blown out under a programming voltage.
9 more elements
Dependencies are inferred from the claim text.