Capacitor device and manufacturing method thereof

Abstract

A capacitor device and a manufacturing method thereof are disclosed in the present invention. The capacitor device includes pad structures, bottom electrodes, a top electrode, and a dielectric layer. The bottom electrodes are disposed on the pad structures, respectively. The top electrode is disposed on the bottom electrodes. The dielectric layer is disposed between the top electrode and the bottom electrodes. The top electrode includes at least one void. The manufacturing throughput of the manufacturing method of the memory device may be enhanced accordingly.

Dependencies are inferred from the claim text.