Access line formation for a memory array

An apparatus, comprising:

• a first conductive line extending in a first direction;
• an insulating material extending in the first direction, wherein a top surface of the insulating material is aligned with a top surface of the first conductive line and a bottom surface of the insulating material is aligned with a bottom surface of the first conductive line;
• a second conductive line extending in a second direction;
• and
• a pillar comprising a chalcogenide material and a first material at a first surface of the pillar, a first portion of the first surface of the pillar being in direct contact with the top surface of the first conductive line and a second portion of the first surface of the pillar being in direct contact with the top surface of the insulating material and not being in contact with the top surface of the first conductive line.

An apparatus, comprising:

• a word line extending in a first direction;
• an insulating material extending in the first direction, wherein a first surface of the insulating material and a first surface of the word line are in a first plane, and wherein a second surface of the insulating material that opposes the first surface of the insulating material and a second surface of the word line that opposes the first surface of the word line are in a second plane;
• a digit line extending in a second direction;
• and
• a pillar comprising a first surface of a first material and a chalcogenide material, wherein a first portion of the first surface is located directly above a portion of the word line, and wherein a second portion of the first surface is located directly above a portion of the insulating material and is not located directly above a portion of the word line.

An apparatus, comprising:

• a first conductive line comprising a surface;
• a second conductive line comprising a surface;
• a third conductive line opposite the first conductive line and the second conductive line;
• a first pillar comprising chalcogenide material and comprising a first surface of a first material in contact with the surface of the first conductive line, the first pillar further comprising a second surface of the first material in contact with the third conductive line, wherein a center of the first surface is offset relative to a center of the surface of the first conductive line such that a portion of the first surface is not in contact with the surface of the first conductive line;
• a second pillar comprising chalcogenide material and comprising a first surface in contact with the surface of the second conductive line and a second surface in contact with the third conductive line, wherein a center of the surface of the second pillar is offset relative to a center of the surface of the second conductive line;
• and
• a third pillar comprising chalcogenide material, the third pillar being located above the first pillar and comprising a third surface with a center that is aligned with the center of the first surface and that is offset relative to the center of the surface of the first conductive line.