Semiconductor device and manufacturing method of semiconductor device
AssigneeSK hynix Inc.
InventorNam Jae LEE
Life of this patent
Estimating the term…
Abstract
A semiconductor device may include a gate structure including gate lines and insulating layers that are alternately stacked; a channel structure extending through the gate structure; a dummy gate structure including stacked dummy gate lines; a dummy channel structure extending through the dummy gate structure; and an isolation insulating structure including horizontal portions stacked between the gate structure and the dummy gate structure and vertical portions extending through the horizontal portions.
Claims33
A semiconductor device comprising:
- a gate structure including gate lines and insulating layers that are alternately stacked;
- a channel structure extending through the gate structure;
- a dummy gate structure including stacked dummy gate lines;
- a dummy channel structure extending through the dummy gate structure;
- and
- an isolation insulating structure including horizontal portions stacked between the gate structure and the dummy gate structure and vertical portions extending through the horizontal portions.
A semiconductor device comprising:
- a gate structure including stacked gate lines;
- a channel structure extending through the gate structure;
- contact plugs extending through the gate structure and connected to the gate lines, respectively;
- a dummy gate structure adjacent to the gate structure in a first direction and including stacked dummy gate lines;
- a dummy channel structure extending through the dummy gate structure;
- and
- an isolation insulating structure located between the gate structure and the dummy gate structure, extending in a second direction intersecting the first direction, and including dummy contact plugs arranged in the second direction.
A manufacturing method of a semiconductor device, the manufacturing method comprising:
- forming a first stack including first material layers and second material layers that are alternately stacked;
- forming dummy holes in the first stack;
- forming a second stack on the first stack, the second stack including third material layers and fourth material layers that are alternately stacked;
- forming a dummy contact hole in the second stack, the dummy contact hole being connected to the dummy holes;
- forming an isolation trench by etching the first material layers and the third material layers through the dummy contact hole and the dummy holes;
- and
- forming an isolation insulating structure in the isolation trench.
A manufacturing method of a semiconductor device, the manufacturing method comprising:
- forming a first stack including first material layers and second material layers that are alternately stacked;
- forming a dummy hole in the first stack;
- forming a second stack on the first stack, the second stack including third material layers and fourth material layers that are alternately stacked;
- forming a dummy contact hole in the second stack, the dummy contact hole being connected to the dummy hole and having a greater width than the dummy hole;
- forming contact holes in the second stack, the contact holes exposing the first material layers and the third material layers, respectively;
- forming an isolation trench by etching the first material layers and the third material layers through the dummy contact hole and the dummy hole;
- forming an isolation insulating structure in the isolation trench;
- forming a dummy contact plug in the isolation insulating structure;
- and
- forming contact plugs in the contact holes.
Dependencies are inferred from the claim text.