Semiconductor device and method of manufacturing semiconductor device

Abstract

A semiconductor device may include a first gate structure including first gate lines each first gate line being exposed by a first step structure extending in a first direction, a second gate structure disposed on the first gate structure to expose the first step structure and including second gate lines each second gate line being exposed by a second step structure extending in the first direction, a channel structure extending through the first gate structure and the second gate structure, the channel structure having a first width, a first support extending through the first step structure, the first support having a second width that is greater than the first width, and a second support extending through the second step structure and the first gate structure, the second support having a third width that is greater than the first width.

Dependencies are inferred from the claim text.