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US 2025/0031369 A1Published application
Semiconductor memory device
AssigneeSK hynix Inc.
InventorNam Jae LEE
Life of this patent
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Abstract
There are provided a semiconductor memory device and a method of manufacturing the semiconductor memory device. The semiconductor memory device includes a pass gate, a plurality of active pillars respectively disposed in a plurality of active holes included in the pass gate, and a gate stack, the pass gate disposed over the gate stack in a first direction.
Claims17
A semiconductor memory device comprising:
- a pass gate;
- a plurality of active pillars respectively disposed in a plurality of active holes included in the pass gate;
- and
- a gate stack, the pass gate disposed over the gate stack in a first direction,
- wherein the gate stack includes a plurality of conductive patterns spaced apart from each other in the first direction and stacked in the first direction.
2 more elements
A semiconductor memory device comprising:
- a peripheral circuit structure including a first region and a second region;
- a pass gate spaced apart from the peripheral circuit structure in a first direction and overlapping the first region of the peripheral circuit structure;
- an active pillar disposed in an active hole of the pass gate;
- a doped semiconductor layer spaced apart from the peripheral circuit structure in the first direction and overlapping the second region of the peripheral circuit structure;
- a gate stack including a contact region between the first region of the peripheral circuit structure and the pass gate, and a cell array region extending from the contact region to overlap the second region of the peripheral circuit structure;
- a channel pillar connected to the doped semiconductor layer and passing through the cell array region of the gate stack;
- a memory layer between the channel pillar and the gate stack;
- and
- a gate contact plug connected to the active pillar and passing through the contact region of the gate stack.
6 more elements
Dependencies are inferred from the claim text.