Vertical metal splitting using helmets and wrap-around dielectric spacers

An integrated circuit (IC) package, comprising:

• an IC die;
• and
• a further component coupled with the IC die,
• wherein the IC die includes:
• a first metallization layer, comprising a first electrically conductive line and a dielectric material on sidewalls of the first electrically conductive line,
• a second metallization layer above the first metallization layer, the second metallization layer comprising a second electrically conductive line staggered with respect to the first electrically conductive line, and
• a material extending along at least one upper edge of the first electrically conductive line, wherein the material is etch-selective with respect to the dielectric material.

A method of providing an integrated circuit (IC) structure, the method comprising:

• providing a first metallization layer over an IC die, the first metallization layer comprising a first electrically conductive line and a dielectric material on sidewalls of the first electrically conductive line;
• providing a second metallization layer above the first metallization layer, the second metallization layer comprising a second electrically conductive line staggered with respect to the first electrically conductive line;
• and
• providing a material extending along at least one upper edge of the first electrically conductive line, wherein the material is etch-selective with respect to the dielectric material.