Manufacturing method of semiconductor substrate

Abstract

A manufacturing method of the semiconductor substrate includes forming a first circuit structure on a first carrier, wherein the first circuit structure comprises a first circuit layer, and the first circuit layer comprises a first dielectric layer; forming a second circuit structure on a second carrier, the second circuit structure comprises a second circuit layer, the second circuit layer comprises a second dielectric layer, one of the first carrier and the second carrier is a temporary carrier, and another one of the first carrier and the second carrier is the temporary carrier or a permanent carrier; bonding the first circuit structure and the second circuit structure, such that the first circuit structure is electrically connected to the second circuit structure; and forming a surface finish layer on an end of the first circuit structure and/or the second circuit structure to constitute the semiconductor substrate.

Dependencies are inferred from the claim text.