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US 2025/0029874 A1Published application
Low Resistance and High Reliability Metallization Module
AssigneeApplied Materials, Inc.
InventorsRoey Shaviv, Suketu Arun Parikh, Feng Chen, Lu Chen
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Abstract
Provided are methods of forming vias with decreased resistance by selectively depositing a barrier layer on an insulating layer and not on a metallic surface. Some embodiments of the disclosure utilize a planar hydrocarbon to form a blocking layer on metallic surfaces. Deposition is performed to selectively deposit on the unblocked insulating surfaces.
Claims20
A method of forming an electronic device, the method comprising:
- selectively depositing a metal layer in an opening on a substrate, the substrate comprising an insulating layer on a first metallization layer, the insulating layer comprising the opening extending from a top surface of the insulating layer to the first metallization layer, and the metal layer extending to the first metallization layer;
- selectively depositing a barrier layer on the top surface of the insulating layer and not on the metal layer;
- forming a second metallization layer on the metal layer and on the barrier layer;
- and
- etching the second metallization layer to form a trench, the trench having at least one sidewall comprising the second metallization layer and the barrier layer, and the trench having a bottom comprising the insulating layer.
2 more elements
A method of forming an electronic device, the method comprising:
- selectively depositing a metal layer in at least one feature on a substrate, the substrate comprising a first insulating layer, a first metallization layer, and the at least one feature thereon, the metal layer extending to the first metallization layer;
- depositing an etch stop layer on a top surface of the first insulating layer and a top surface of the metal layer;
- depositing a second insulating layer on a top surface of the etch stop layer;
- performing a single damascene process to form an opening extending from a top surface of the second insulating layer to the top surface of the metal layer, the opening having at least one sidewall and a bottom surface comprising the metal layer;
- selectively depositing a barrier layer in the opening on the at least one sidewall and not on the metal layer;
- and
- forming a second metallization layer on the metal layer and on the barrier layer.
4 more elements
A processing tool comprising:
- a pre-clean chamber having a substrate support therein;
- a selective metal deposition chamber;
- a barrier metal deposition chamber;
- a metal deposition chamber;
- a PVD metal deposition chamber;
- a CVD metal deposition chamber;
- at least one robot configured to access the pre-clean chamber, the selective metal deposition chamber, the barrier metal deposition chamber, the metal deposition chamber, the CVD metal deposition chamber, and the PVD metal deposition chamber;
- and
- a controller connected to the pre-clean chamber, the selective metal deposition chamber, the barrier metal deposition chamber, the metal deposition chamber, the PVD metal deposition chamber, the CVD metal deposition chamber, and the at least one robot robot, the controller having one or more configurations selected from:
- pre-cleaning a substrate, selectively depositing a metal layer, selectively depositing a barrier layer, and forming a metallization layer.
7 more elements
Dependencies are inferred from the claim text.